US Patent Issued to Fujian Jinhua Integrated Circuit on Sept. 23 for "Semiconductor memory device having a bit line contact disposed in the substrate" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,242, issued on Sept. 23, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor memory device having a bit line contact disposed in the substrate" was invented by Yukihiro Nagai (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a method of fabricating the same, which includes a substrate, a resistor structure, a bit line structure, and a bit line contact. The substrate has an active area and a plurality of isolating regions. The resistor structure is disposed on the isolating regions, and includes a first semiconductor layer, a first cappin...