ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,039, issued on Sept. 16, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).
"Semiconductor memory device" was invented by Yifei Yan (Quanzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, bit lines, contacts, a dielectric layer, storage node pads and a capacitor structure. The bit lines are disposed on the substrate and include a plurality of first bit lines and at least one second bit line. The contacts are disposed on the substrate and alternately and separately disposed with the bit lines. The dielectric layer is disposed over the contacts and bit lines. The st...