ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,455, issued on Oct. 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).
"Memory structure" was invented by Yifei Yan (Quanzhou, China), Hui-Huang Chen (Quanzhou, China) and Chao-Wei Lin (Quanzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a substrate, a first device layer disposed on the substrate, a plurality of memory regions in the first device layer, a plurality of word lines and bit lines in the first device layer to control memory cells of the memory regions, a second device layer disposed between the substrate and the first device layer, and first peripheral regions and secon...