US Patent Issued to Fujian Jinhua Integrated Circuit on Nov. 25 for "Semiconductor structure and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,210, issued on Nov. 25, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor structure and method for forming the same" was invented by Xiaopei Fang (Quanzhou, China), Gang-Yi Lin (Quanzhou, China) and Congcong Wang (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a first dielectric layer on the substrate, a second dielectric layer on the first dielectric layer, and an interconnection structure on the second dielectric layer. The interconnection structure includes at least two lateral extending portions on the second dielectric layer, and a U-shaped...