ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,722, issued on Nov. 18, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor memory device comprises a bit line having a plurality of pins extending toward a substrate" was invented by Janbo Zhang (Quanzhou, China), Li-Wei Feng (Quanzhou, China) and Yu-Cheng Tung (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor memory device and a fabricating method thereof, includes a substrate, a plurality of gate structures, a plurality of isolation fins, at least one bit line, and a plug. The gate structures are disposed in the substrate, being parallel with e...