US Patent Issued to Fujian Jinhua Integrated Circuit on Nov. 18 for "Semiconductor device and fabricating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,753, issued on Nov. 18, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor device and fabricating method thereof" was invented by Yu-Cheng Tung (Quanzhou, China) and Janbo Zhang (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a fabricating method thereof, the semiconductor device includes a substrate, a capacitor structure, a sidewall high-k dielectric layer and a supporting structure. The capacitor structure is disposed on the substrate, and includes a plurality of columnar bottom electrodes, a capacitor dielectric layer and a top ele...