ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,607, issued on May 13, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).
"Three-dimensional memory device" was invented by Guoguo Kong (Quanzhou, China), Shi-Wei He (Quanzhou, China), Yun-Fan Chou (Quanzhou, China), Dongxiang Zhu (Quanzhou, China), Gang Wu (Quanzhou, China), Canfa Dai (Quanzhou, China) and Jianxiong Lai (Quanzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes a staircase structure comprising steps respectively comprising a conductive layers and a dielectric layer. A sidewall of the conductive layer is recessed from a sidewall of the dielectric layer to form...