ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,136, issued on March 25, was assigned to FUJIAN JINHUA INTEGRATED CIRCUIT Co. LTD. (Jinjiang, China).
"Semiconductor structure" was invented by Yi-Wang Jhan (Jinjiang, China), Yung-Tai Huang (Jinjiang, China), Xin You (Jinjiang, China), Xiaopei Fang (Jinjiang, China) and Yu-Cheng Tung (Jinjiang, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a plurality of gate conductive patterns on the substrate; an interlayer dielectric layer covering the gate conductive patterns on the substrate; an interconnect structure comprising a contact plug and a first contac...