US Patent Issued to Fujian Jinhua Integrated Circuit on March 18 for "Semiconductor memory device and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,533, issued on March 18, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor memory device and method of fabricating the same" was invented by Ken-Li Chen (Quanzhou, China), Yifei Yan (Quanzhou, China) and Yu-Cheng Tung (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor memory device and a fabricating method thereof, and the semiconductor memory device includes a substrate, bit lines, plugs and a spacer structure. The bit lines are separately disposed on the substrate, and the plugs are also disposed on the substrate to alternately arrange with th...