US Patent Issued to Fujian Jinhua Integrated Circuit on June 24 for "Semiconductor memory device having buried word line with a neck profile portion" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,536, issued on June 24, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor memory device having buried word line with a neck profile portion" was invented by Janbo Zhang (Quanzhou, China) and Yu-Cheng Tung (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device including an array region and a peripheral region surrounding the array region. The array region includes a plurality of active regions and a first insulating layer disposed between the active regions. The peripheral region includes a peripheral structure, a second insulating layer surrounding the peripheral struct...