US Patent Issued to Fujian Jinhua Integrated Circuit on June 17 for "Dynamic random access memory device with active regions of different profile roughness and method for forming the same" (Taiwanese, Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,345, issued on June 17, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Dynamic random access memory device with active regions of different profile roughness and method for forming the same" was invented by Yaoguang Xu (Jinjiang, China), Hsien-Shih Chu (Kaohsiung, Taiwan), Yun-Fan Chou (Taichung, Taiwan), Yu-Cheng Tung (Kaohsiung, Taiwan) and Chaoxiong Wang (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A DRAM includes a substrate, a plurality of first active regions disposed on the substrate and arranged end-to-end along the first direction, and a plurality of second active regions disposed between th...