US Patent Issued to Fujian Jinhua Integrated Circuit on July 15 for "Semiconductor memory device and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,885, issued on July 15, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor memory device and method of fabricating the same" was invented by Janbo Zhang (Quanzhou, China) and Yu-Cheng Tung (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor memory device and a fabricating method thereof, which includes a substrate, a plurality of buried word lines, and a plurality of storage node contacts. The substrate includes a plurality of active areas and a shallow trench isolation. The buried word lines are embedded in the substrate, across the shallow trench i...