US Patent Issued to Fujian Jinhua Integrated Circuit on Feb. 4 for "Semiconductor memory device and method for forming the same" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,751, issued on Feb. 4, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor memory device and method for forming the same" was invented by Min-Teng Chen (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate and a capacitor. The capacitor is disposed on the substrate, and the capacitor includes a bottom electrode layer, a capacitor dielectric layer and a top electrode layer sequentially stacked from bottom to top and an aluminum-containing insulation layer. The aluminum-containing insulation layer includes aluminum titanium nitride or aluminum oxynitrid...