US Patent Issued to Fujian Jinhua Integrated Circuit on Feb. 3 for "Semiconductor device and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,314, issued on Feb. 3, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor device and method of fabricating the same" was invented by Yu Chun Lin (Quanzhou, China), Sun-Hung Chen (Quanzhou, China) and Anqi Liu (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention discloses a semiconductor device including a substrate, a stacked structure, a trench, a channel structure, and a barrier layer. The stacked structure is disposed on the substrate, wherein the stacked structure includes a first metal layer, at least one stacked layer and a second metal layer from bottom to top. The trench is dis...