US Patent Issued to Fujian Jinhua Integrated Circuit on Feb. 25 for "Semiconductor device with shallow trench isolation having multi-stacked layers and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,369, issued on Feb. 25, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor device with shallow trench isolation having multi-stacked layers and method of forming the same" was invented by Huixian Lai (Quanzhou, China), Yu Cheng Tung (Quanzhou, China), Chao-Wei Lin (Quanzhou, China) and Chiayi Chu (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; at least one trench located at a top surface of the substrate; and a first dielectric layer, a second dielectric layer and a third dielectric layer that are sequentially stacked on an inner wall of each of the...