US Patent Issued to Fujian Jinhua Integrated Circuit on Dec. 9 for "Three-dimensional memory device and method for fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,554, issued on Dec. 9, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Three-dimensional memory device and method for fabricating the same" was invented by Guoguo Kong (Quanzhou, China), Meng Qi Zhuang (Quanzhou, China), Yun-Fan Chou (Quanzhou, China), Yu-Cheng Tung (Quanzhou, China) and Shi-Wei He (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a three-dimensional memory device and a method of fabricating the same, which includes a substrate, and a memory stack structure. The memory stack structure is disposed on the substrate, and includes a plurality of stack units seque...