US Patent Issued to Fujian Jinhua Integrated Circuit on Dec. 9 for "Semiconductor memory device and method of fabricating the same" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,545, issued on Dec. 9, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor memory device and method of fabricating the same" was invented by Yukihiro Nagai (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor memory device and a fabricating method thereof, which includes a substrate, a bit line structure and a resistor structure. The substrate has a plurality of active areas and an isolating region. The resistor structure includes a first semiconductor layer and a first capping layer from bottom to top. The bit line structure includes a second semicondu...