US Patent Issued to Fujian Jinhua Integrated Circuit on Dec. 9 for "Semiconductor device and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,231, issued on Dec. 9, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor device and method of fabricating the same" was invented by Yifei Yan (Quanzhou, China) and Huixian Lai (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device and a fabricating method thereof, which includes a substrate and a plurality of word lines. The substrate includes a shallow trench isolation and an active structure defined by the shallow trench isolation and the active structure includes a first active area and a second active area. The first active area includes a ...