US Patent Issued to Fujian Jinhua Integrated Circuit on Dec. 30 for "Semiconductor device and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,891, issued on Dec. 30, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor device and method of fabricating the same" was invented by Yu-Cheng Tung (Quanzhou, China) and Janbo Zhang (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a fabricating method thereof, including a substrate, a supporting structure and a capacitor structure. The supporting structure is disposed on the substrate, and the supporting structure includes a first supporting layer and a second supporting layer. The capacitor structure is disposed on the substrate and in...