US Patent Issued to Fujian Jinhua Integrated Circuit on Dec. 30 for "Memory device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,888, issued on Dec. 30, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Memory device and manufacturing method thereof" was invented by Xuanxuan Chen (Quanzhou, China), Mingqin Shangguan (Quanzhou, China), Changfu Ye (Quanzhou, China) and Tsuo-Wen Lu (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a manufacturing method thereof are disclosed in the present invention. The memory device includes a substrate, trenches, an oxide semiconductor layer, a gate dielectric layer, and word line structures. The substrate includes active regions and an isolation structure located between the activ...