US Patent Issued to Fujian Jinhua Integrated Circuit on Aug. 19 for "Semiconductor structure and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,152, issued on Aug. 19, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor structure and method for forming the same" was invented by Yi-Wang Jhan (Quanzhou, China), Fu-Che Lee (Quanzhou, China), Gang-Yi Lin (Quanzhou, China), An-Chi Liu (Quanzhou, China), Yifei Yan (Quanzhou, China) and Yu-Cheng Tung (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a substrate, a first dielectric layer disposed on the substrate, a second dielectric layer disposed on the first dielectric layer and in physical contact with the first dielectric layer, an opening on the substrat...