ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,617, issued on Aug. 12, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).
"Semiconductor device and method of fabricating the same" was invented by Yu-Cheng Tung (Quanzhou, China) and Janbo Zhang (Quanzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a method of fabricating the same, and the semiconductor device includes a substrate, active areas, and an isolation structure. The active areas are parallel and separately disposed with each other in the substrate, and each of the active areas includes an active fin and active ends disposed at two sides of the...