US Patent Issued to Fujian Jinhua Integrated Circuit on April 8 for "Semiconductor device and method of fabricating the same having a second active region disposed at an outer side of a first active region" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,594, issued on April 8, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor device and method of fabricating the same having a second active region disposed at an outer side of a first active region" was invented by Yu-Cheng Tung (Kaohsiung, Taiwan) and Janbo Zhang (Zhangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device and a method of fabricating the same, the semiconductor device including a substrate, an active structure and a shallow trench isolation. The active structure is disposed within the substrate, including a plurality of first activ...