US Patent Issued to Fujian Jinhua Integrated Circuit on April 8 for "Dynamic random access memory device" (Chinese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,048, issued on April 8, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Dynamic random access memory device" was invented by Li-Wei Feng (Quanzhou, China) and Janbo Zhang (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic random access memory device includes a substrate having a first active region, a first isolation region, a second active region, and a second isolation region arranged in order along a first direction. A first bit line is disposed on the first active region and in direct contact with the first active region. A second bit line is disposed on the second isolation region. An insulat...