US Patent Issued to FUJIAN JING'AN OPTOELECTRONICS on July 22 for "Processed wafer and processing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,366,008, issued on July 22, was assigned to FUJIAN JING'AN OPTOELECTRONICS Co. LTD. (Quanzhou, China).

"Processed wafer and processing method thereof" was invented by Shengyu Yang (Quanzhou, China), Minghui Fang (Quanzhou, China), Lin Lu (Quanzhou, China), Shihwei Huang (Quanzhou, China) and Shaobin Chen (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A processed wafer includes an outer surface, and a treated portion having a depth of 0 to 50 micro metre measured from the outer surface. At least a part of the treated portion has an oxygen concentration of less than 13 wt %. A method for processing a wafer includes the steps of: applying ...