US Patent Issued to FUJI ELECTRIC on Sept. 9 for "Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,316, issued on Sept. 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device" was invented by Takeyoshi Nishimura (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a silicon carbide semiconductor device includes selectively forming a semiconductor region of a conductivity type at a first main surface of a semiconductor substrate containing silicon carbide; forming a nickel layer above the semiconductor region; ion-implanting aluminum in the nickel layer; performing a heat treatment to the nickel layer ...