ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,348, issued on Sept. 9, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Insulated gate bipolar transistor" was invented by Yoshihiro Ikura (Nagano, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor includes: a gate electrode embedded in a gate trench through a gate insulating film, the gate trench penetrating an emitter region and a base region; and a dummy electrode embedded in a dummy trench through a dummy insulating film, the dummy trench penetrating the emitter region and the base region and being disposed on each side of the gate trench and laterally spaced from each side of the gate trench s...