ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,892, issued on Sept. 30, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device" was invented by Yuki Kumazawa (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a semiconductor device capable of suppressing loss in a switching element at high temperature without increasing radiation noise of the switching element. A semiconductor device includes an IGBT including a gate to which a gate signal is input, a temperature detection element that detects temperature of the IGBT, and a capacitance adjustment unit that is arranged between the gate of the IGBT and a refer...