ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,289, issued on Sept. 23, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Shigeki Sato (Azumino, Japan), Soichi Yoshida (Matsumoto, Japan), Kouji Asahi (Shiojiri, Japan) and Seiji Momota (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a first trench portion having a predetermined first trench length; a second trench portion having a second trench length longer than the first trench length; a first gate runner portion configured to be electrically connected to an end portion of the first trench portion; and a second gate runner portion conf...