US Patent Issued to FUJI ELECTRIC on Sept. 2 for "Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,416, issued on Sept. 2, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device" was invented by Masaki Miyazato (Matsumoto, Japan) and Makoto Utsumi (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Back-surface roughness of a back surface of a silicon carbide semiconductor device having a MOS gate structure in a first region that is a region within 30 micro metre of a cross section (lateral surface) of the device is at most 4 micro metre while the back-surface roughness in a second region other than the first region is at most ...