ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,067, issued on Sept. 16, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device" was invented by Hitoshi Abe (Matsumoto, Japan), Hiroshi Miyata (Matsumoto, Japan), Hidenori Takahashi (Matsumoto, Japan), Seiji Noguchi (Matsumoto, Japan) and Naoya Shimada (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of first trenches each having a stripe-shape, extending in parallel to each other, a first mesa region, a second mesa region, a first interlayer insulating film covering the first mesa region and the second mesa region, and a first contact hole penetrating the first i...