US Patent Issued to FUJI ELECTRIC on Oct. 7 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,622, issued on Oct. 7, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Kaname Mitsuzuka (Matsumoto, Japan) and Tohru Shirakawa (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a gate trench portion and a first trench portion adjacent to the gate trench portion. The device may include a first conductivity type drift region provided in a semiconductor substrate, a second conductivity type base region provided above the drift region, a first conductivity type emitter region provided above the base...