ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,110, issued on Oct. 21, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Norihiro Komiyama (Matsumoto, Japan), Masahiro Sasaki (Azumino, Japan), Yuichi Onozawa (Matsumoto, Japan) and Shoji Yamada (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface and having a drift region of a first conductivity type; a first main terminal provided above the upper surface; a second main terminal provided below the lower surface; a control terminal configured to control whether or not to caus...