US Patent Issued to FUJI ELECTRIC on Nov. 4 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,792, issued on Nov. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Yuki Karamoto (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a drift region, a base region, two trench portions and a mesa portion, wherein at least one of the two trench portions is a gate trench portion, the mesa portion includes: a first conductivity type emitter region provided to be exposed on an upper surface of the mesa portion; a second conductivity type contact region provided to be exposed on the upper surface of...