ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,783, issued on Nov. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Insulated gate semiconductor device" was invented by Takashi Tsuji (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a high-concentration layer of a first conductivity-type provided on a drift layer of the first conductivity-type; a buried layer of a second conductivity-type provided in the high-concentration layer; an injection regulation region of the second conductivity-type provided on the high-concentration layer; a high-concentration region of the second conductivity-type provided inside the injection regulation regi...