ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,748, issued on Nov. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Insulated gate bipolar transistor" was invented by Hong-fei Lu (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "IGBT includes an n-type drift layer, an n-type accumulation layer provided on the upper surface of the drift layer having higher impurity concentration than the drift layer, a base layer provided on the upper surface of the accumulation layer, a gate electrode embedded inside a striped gate trench penetrating the base layer and the storage layer through a gate insulating film, and a dummy electrode embedded inside a dummy trench provided to fac...