ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,787, issued on Nov. 18, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Silicon carbide semiconductor device" was invented by Yasuyuki Hoshi (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An active region has, in a periphery thereof, a p-type outer peripheral region that has sequentially from a front surface of a semiconductor substrate, a p++-type contact extension portion, a p-type base extension portion, and an upper portion and a lower portion of a p+-type extension portion, so as to form, at an outer end portion thereof, steps that are recessed stepwise toward a center of the active region and that in a depth direct...