ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,815, issued on Nov. 18, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Tomoyuki Obata (Matsumoto, Japan), Soichi Yoshida (Matsumoto, Japan), Tetsutaro Imagawa (Matsumoto, Japan) and Seiji Momota (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device having transistor and diode sections. The semiconductor device comprises: a gate metal layer provided above the upper surface of a semiconductor substrate; an emitter electrode provided above the upper surface of the semiconductor substrate; a first conductivity-type emitter region provided on the semiconductor...