US Patent Issued to FUJI ELECTRIC on Nov. 11 for "Semiconductor device having an injection suppression region" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,303, issued on Nov. 11, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device having an injection suppression region" was invented by Tohru Shirakawa (Matsumoto, Japan), Daisuke Ozaki (Okaya, Japan) and Yasunori Agata (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrat...