ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,297, issued on Nov. 11, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device and manufacturing method thereof" was invented by Akito Nakagome (Matsumoto, Japan), Ryoichi Kato (Matsumoto, Japan) and Yoshinari Ikeda (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a terminal portion including a second external terminal, an insulating sheet disposed on the second external terminal, and a first external terminal disposed on the insulating sheet. The first external terminal has a first end portion with a first end. At the first end portion, a rear surface of the first external ter...