ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,560, issued on May 27, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Yasunori Agata (Matsumoto, Japan), Takashi Yoshimura (Matsumoto, Japan) and Hiroshi Takishita (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a drift region and a buffer region is provided. The drift region of a first conductivity type is provided in a semiconductor substrate. The buffer region of the first conductivity type includes at least six peaks in a doping concentration distribution in a depth direction of the semiconductor substrate. A curve connecting the at least six peak...