ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,148, issued on May 20, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor resistance device" was invented by Yoshiaki Toyoda (Nagano, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor resistance device includes a polysilicon resistance region; a first contact region in the resistance region, the first contact region having the same conductivity type as the resistance region and having a higher impurity concentration than the resistance region; a first wiring electrically connected to one end of the resistance region via a plurality of first vias; and a second wiring electrically connected to the other end of ...