ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,099, issued on May 20, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device" was invented by Masaharu Yamaji (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: an n+-type drain region deposited at an upper part of a p-type semiconductor base body; an n-type drift region deposited to be in contact with the n+-type drain region; an n+-type source region opposed to the n+-type drain region with the n-type drift region interposed; a p-type gate region deposited to be in contact with the n-type drift region; an interlayer insulating film covering the n-type drift region; a resistiv...