US Patent Issued to FUJI ELECTRIC on May 13 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,617, issued on May 13, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Yasunori Agata (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device which includes a semiconductor substrate that has an upper surface and a lower surface and includes a bulk donor. A hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction has a first hydrogen concentration peak and a second hydrogen concentration peak disposed between the lower surface of the semiconductor substrate and the first...