US Patent Issued to FUJI ELECTRIC on March 25 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,117, issued on March 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device and method of manufacturing the same" was invented by Masaharu Yamaji (Matsumoto, Japan), Taichi Karino (Matsumoto, Japan), Hitoshi Sumida (Matsumoto, Japan) and Hideaki Itoh (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a wiring layer; a titanium nitride layer deposited on the wiring layer; a titanium oxynitride layer deposited on the titanium nitride layer; a titanium oxide layer deposited on the titanium oxynitride layer; and a surface passivation film deposited on the titanium oxide layer, ...