US Patent Issued to FUJI ELECTRIC on March 25 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,131, issued on March 25, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Tsuneyuki Matsushima (Matsumoto, Japan), Kazuhiro Kitahara (Matsumoto, Japan) and Naoko Kodama (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor substrate provided with an active portion and an edge termination structure portion surrounding the active portion; an interlayer dielectric film provided above the semiconductor substrate; a protective film provided above the interlayer dielectric film; and a pr...