US Patent Issued to FUJI ELECTRIC on March 25 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,058, issued on March 25, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Yasunori Agata (Matsumoto, Japan), Takashi Yoshimura (Matsumoto, Japan), Hiroshi Takishita (Matsumoto, Japan), Misaki Uchida (Matsumoto, Japan), Michio Nemoto (Matsumoto, Japan), Toru Ajiki (Matsumoto, Japan) and Yuichi Onozawa (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device, including a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein a hydrogen chemical concentration distri...