ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,217, issued on March 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device" was invented by Masakazu Baba (Matsumoto, Japan) and Shinsuke Harada (Tsukuba, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, including: a drift layer of a first conductivity type provided in a semiconductor base; a base layer of a second conductivity type provided in the semiconductor base at a front surface side thereof; a plurality of first trenches provided in the semiconductor base at a front surface side thereof, and having a plurality of first portions extending in a first direction to form a striped pattern...