US Patent Issued to FUJI ELECTRIC on March 11 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,510, issued on March 11, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Kazuki Kamimura (Matsumoto, Japan) and Motoyoshi Kubouchi (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has transistor portions and diode portions. The transistor portions have a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type, second semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first semiconductor layer of the first conducti...