ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,607, issued on June 24, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device" was invented by Kaname Mitsuzuka (Matsumoto, Japan), Tohru Shirakawa (Matsumoto, Japan), Toru Ajiki (Matsumoto, Japan) and Yuichi Onozawa (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor portion which includes a plurality of gate structure portions, and a diode portion which includes a cathode region in a lower surface of a semiconductor substrate. Each of the gate structure portions includes a gate trench portion, an emitter region of a first conductive type which is provided between a...